27 May 2013
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Study on oxidation processes of 4H-SiC (0001) for investigation of the atomically flattening mechanism in plasma assisted polishing
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Study on oxidation processes of 4H-SiC (0001) for investigation of the atomically flattening mechanism in plasma assisted polishing
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Uploaded: 27th May 2013
AuthorH. DengAuthor, K Ymamura
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